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| Dual N-CHANNEL POWER MOSFET FEATURES ! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL Notes ; (1) TJ= 25 to 150 (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.0M)(1) Gate-to-Source Voltage Continuous Drain Current TA=25 Continuous Drain Current TA=100 Drain Current-Pulsed (2) Total Power Dissipation TA=25 TA=70 Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16" from case for 5 seconds Value 50 50 20 2.0 1.6 8.0 2.0 1.3 - 55 to +150 300 ! Surface Mounding Package : 8SOP Units V V V A A V W Rev. A SSD2007A Electrical Characteristics (TA=25 unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current(2) Static Drain-Source On-State Resistance(2) Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge --------2.5 -----1.0 2.0 Min. Typ. Max. Units 600 2.0 ----8.0 --------4.0 1.0 -1.0 2 25 -0.3 0.5 -40 70 100 70 15 --nC ns A S V V A A A Dual N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250A VDS= VGS ,ID=250A VGS=20V VGS=-20V VDS=50V VDS=40V,TJ=55 VGS=10V,VDS=5V VGS=10V,ID=1.5A VGS=5.0V,ID=0.6A VDS 15V,ID=2.0A VDD=30V,ID=0.6A, Z0=6.0, VDS=25V,VGS=10V, ID=1.3A Thermal Resistance Symbol RJA Notes ; (1) TJ= 25 to 150 (2) Pulse Test : Pulse Width 300s, Duty Cycle 2% Characteristic Junction-to-Ambient Typ. -- Max. 62.5 Units /W Source-Drain Diode Ratings and Characteristics Symbol IS VSD trr Characteristic Continuous Source Current (Body Diode) Diode Forward Voltage(2) Reverse Recovery Time Min. Typ. Max. Units ----------1.2 100 V ns 1.8 A Test Condition Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier G D S TJ=25,IS=1.25A,VGS=0V TJ=25,IF=2.5A,diF/dt=100A/s Dual N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 1 0 V s=1 g 0V V s=5 gV SSD2007A Fig 2. Transfer Characteristics 1 0 8 8 ID , Drain Current [A] ID , Drain Current [A] 6 6 1 0 oC 5 4 2 oC 5 - 5 oC 5 2 4 V s=4 gV 2 V s=3 gV 0 0 2 4 6 8 1 0 0 0 1 2 3 4 5 6 7 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 10 . 30 2 Fig 4. Capacitance vs. Drain-Source Voltage RDS(on) , [ ] Drain-Source On-Resistance 08 . Capacitance [pF] 20 4 C iss 10 6 C oss 8 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H 06 . 04 . V =5V GS 02 . V =1 V 0 GS 00 . 0 C rss 0 1 2 3 4 5 5 1 0 1 5 2 0 2 5 ID , Drain Current [A] VDS , Drain-Source Voltage [V] Fig 5. Breakdown Voltage vs. Temperature 12 . Fig 6. Nomalized On-Resistance vs. Temperature 14 . BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 12 . V =1 V 0 GS I =15A . D 10 . I = 2 0 A 5 D 10 . 08 . 09 . 06 . 08 . -0 5 0 5 0 10 0 10 5 -0 5 0 5 0 10 0 10 5 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] SSD2007A 1 Dual N-CHANNEL POWER MOSFET Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient Thermal Impedance Duty Cycle=0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 Single Pulse 0.01 - 5 10 10- 4 10- 3 2 @ Notes : 1. R J A (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TA =PD M *Z J A (t) 4. Surface Mounted t 10- 2 10- 1 100 Square Wave Pulse Duration [sec] Fig 8. Source-Drain Diode Forward Voltage 12 0 1 0 Fig 9. Gate Charge vs. Gate-Source Voltage IDR , Reverse Drain Current [A] 11 0 VGS , Gate-Source Voltage [V] 5 V =2 V 5 DD I =13 .A D 10 0 T = 5 oC J 10 T = 5 oC J2 00 . 04 . 08 . 12 . 16 . 20 . 24 . 0 0 2 4 6 8 1 0 VSD , Source-Drain Voltage [V] QG , Total Gate Charge [nC] Fig 10. Threshold Voltage 20 . VGS(th) , (Normalized) 15 . I = 2 0 A 5 D 10 . 05 . 00 . -0 5 0 5 0 10 0 10 5 TJ , Junction Temperature [oC] TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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